NVRAM Database Downlode
| Computer memory types |
|---|
| Volatile |
| RAM |
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| Historical |
|
| Non-volatile |
| ROM |
| NVRAM |
| Early stage NVRAM |
| Magnetic |
| Optical |
| In development |
| Historical |
|
Wondershare dr fone ios cracked patch 1. Non-volatile random-access memory (NVRAM) is random-access memory that is non-volatile. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied.
On this page we are going to introduce the best Android ADB Driver (15 seconds ADB Installer) which supports every android device including Samsung, Nexus, Motorola, LG, Huawei, Micromax and lots more. One type of NVRAM is SRAM that is made non-volatile by connecting it to a constant power source such as a battery. Another type of NVRAM uses EEPROMchips to save its contents when power is turned off. In this case, NVRAM is composed of a combination of SRAM and EEPROM chips.
Currently, the best-known form of both NV-RAM and EEPROM memory is flash memory. Some drawbacks to flash memory include the requirement to write it in larger blocks than many computers can automatically address, and the relatively limited longevity of flash memory due to its finite number of write-erase cycles (most consumer flash products at the time of writing[when?] can withstand only around 100,000 rewrites before memory begins to deteriorate). Another drawback is the performance limitations preventing flash from matching the response times and, in some cases, the random addressability offered by traditional forms of RAM. Several newer technologies are attempting to replace flash in certain roles, and some even claim to be a truly universal memory, offering the performance of the best SRAM devices with the non-volatility of flash.[1] As of June 2018 these alternatives have not yet become mainstream.
Development is going on for the use of NVRAM chips as a system's main memory, for a more persistent memory. Known as NVDIMM-P, it is expected to be released by 2018[2].
- 3Newer approaches
Early NVRAMs[edit]
Early computers used core and drum memory systems which were non-volatile as a byproduct of their construction. The most common form of memory through the 1960s was magnetic-core memory, which stored data in the polarity of small magnets. Since the magnets held their state even with the power removed, core memory was also non-volatile. Other memory types required constant power to retain data, such as vacuum tube or solid-state flip-flops, Williams tubes, and semiconductor memory (static or dynamic RAM).
Advances in semiconductor fabrication in the 1970s led to a new generation of solid state memories that magnetic-core memory could not match on cost or density. Today dynamic RAM forms the vast majority of a typical computer's main memory. Many systems require at least some non-volatile memory. Desktop computers require permanent storage of the instructions required to load the operating system. Embedded systems, such as an engine control computer for a car, must retain their instructions when power is removed. Many systems used a combination of RAM and some form of ROM for these roles.
Custom ROM integrated circuits were one solution. The memory contents were stored as a pattern of the last mask used for manufacturing the integrated circuit, and so could not be modified once completed.
PROM improved on this design, allowing the chip to be written electrically by the end-user. PROM consists of a series of diodes that are initially all set to a single value, '1' for instance. By applying higher power than normal, a selected diode can be 'burned out' (like a fuse), thereby permanently setting that bit to '0'. PROM facilitated prototyping and small volume manufacturing. Many semiconductor manufacturers provided a PROM version of their mask ROM part, so that development firmware could be tested before ordering a mask ROM.
Those who required real RAM-like performance and non-volatility typically have had to use conventional RAM devices and a battery backup. For example, IBM PC's and successors beginning with the IBM PC AT used nonvolatile BIOS memory, often called CMOS RAM or parameter RAM, and this was a common solution in other early microcomputer systems like the original Apple Macintosh, which used a small amount of memory powered by a battery for storing basic setup information like the selected boot volume. (The original IBM PC and PC XT instead used DIP switches to represent up to 24 bits of system configuration data; DIP or similar switches are another, primitive type of programmable ROM device that was widely used in the 1970s and 1980s for very small amounts of data—typically no more than 8 bytes.) Before industry standardization on the IBM PC architecure, some other microcomputer models used battery-backed RAM more extensively: for example, in the TRS-80 Model 100/Tandy 102, all of the main memory (8 KB minimum, 32 KB maximum) is battery-backed SRAM. Also, in the 1990s many video game software cartridges (e.g. for consoles such as the Sega Genesis) included battery-backed RAM to retain saved games, high scores, and similar data. Also, some arcade video game cabinets contain CPU modules that include battery-backed RAM containing keys for on-the-fly game software decryption. Much larger battery backed memories are still used today as caches for high-speed databases that require a performance level newer NVRAM devices have not yet managed to meet.
The floating-gate transistor[edit]
A huge advance in NVRAM technology was the introduction of the floating-gate transistor, which led to the introduction of erasable programmable read-only memory, or EPROM. EPROM consists of a grid of transistors whose gate terminal (the 'switch') is protected by a high-quality insulator. By 'pushing' electrons onto the base with the application of higher-than-normal voltage, the electrons become trapped on the far side of the insulator, thereby permanently switching the transistor 'on' ('1'). EPROM can be re-set to the 'base state' (all '1's or '0's, depending on the design) by applying ultraviolet light (UV). The UV photons have enough energy to push the electrons through the insulator and return the base to a ground state. At that point the EPROM can be re-written from scratch.
An improvement on EPROM, EEPROM, soon followed. The extra 'E' stands for electrically, referring to the ability to reset EEPROM using electricity instead of UV, making the devices much easier to use in practice. The bits are re-set with the application of even higher power through the other terminals of the transistor (source and drain). This high power pulse, in effect, sucks the electrons through the insulator, returning it to the ground state. This process has the disadvantage of mechanically degrading the chip, however, so memory systems based on floating-gate transistors in general have short write-lifetimes, on the order of 105 writes to any particular bit.
One approach to overcoming the rewrite count limitation is to have a standard SRAM where each bit is backed up by an EEPROM bit. In normal operation the chip functions as a fast SRAM and in case of power failure the content is quickly transferred to the EEPROM part, from where it gets loaded back at the next power up. Such chips were called NOVRAMs[3] by their manufacturers.
The basis of flash memory is identical to EEPROM, and differs largely in internal layout. Flash allows its memory to be written only in blocks, which greatly simplifies the internal wiring and allows for higher densities. Memory storage density is the main determinant of cost in most computer memory systems, and due to this flash has evolved into one of the lowest cost solid-state memory devices available. Starting around 2000, demand for ever-greater quantities of flash have driven manufacturers to use only the latest fabrication systems in order to increase density as much as possible. Although fabrication limits are starting to come into play, new 'multi-bit' techniques appear to be able to double or quadruple the density even at existing linewidths.
Newer approaches[edit]
Flash and EEPROM's limited write-cycles are a serious problem for any real RAM-like role, however. In addition, the high power needed to write the cells is a problem in low-power roles, where NVRAM is often used. The power also needs time to be 'built up' in a device known as a charge pump, which makes writing dramatically slower than reading, often as much as 1,000 times. A number of new memory devices have been proposed to address these shortcomings.
Ferroelectric RAM[edit]
To date, the only such system to enter widespread production is ferroelectric RAM, or F-RAM (sometimes referred to as FeRAM). F-RAM is a random-access memory similar in construction to DRAM but (instead of a dielectric layer like in DRAM) contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O3], commonly referred to as PZT. The Zr/Ti atoms in the PZT change polarity in an electric field, thereby producing a binary switch. Unlike RAM devices, F-RAM retains its data memory when power is shut off or interrupted, due to the PZT crystal maintaining polarity. Due to this crystal structure and how it is influenced, F-RAM offers distinct properties from other nonvolatile memory options, including extremely high endurance (exceeding 1016 access cycles for 3.3 V devices), ultra low power consumption (since F-RAM does not require a charge pump like other non-volatile memories), single-cycle write speeds, and gamma radiation tolerance.[4]Ramtron International has developed, produced, and licensed ferroelectric RAM (F-RAM), and other companies that have licensed and produced F-RAM technology include Texas Instruments, Rohm, and Fujitsu.
Magnetoresistive RAM[edit]
Another approach to see major development effort is magnetoresistive random-access memory, or MRAM, which uses magnetic elements and in general operates in a fashion similar to core, at least for the first-generation technology. Only one MRAM chip has entered production to date: Everspin Technologies' 4 Mbit part, which is a first-generation MRAM that utilizes cross-point field induced writing.[5] Two second-generation techniques are currently in development: Thermal Assisted Switching (TAS),[6] which is being developed by Crocus Technology, and spin-transfer torque (STT) on which Crocus, Hynix, IBM, and several other companies are working.[7] STT-MRAM appears to allow for much higher densities than those of the first generation, but is lagging behind flash for the same reasons as FeRAM – enormous competitive pressures in the flash market.
Phase-change RAM[edit]
Another solid-state technology to see more than purely experimental development is Phase-change RAM, or PRAM. PRAM is based on the same storage mechanism as writable CDs and DVDs, but reads them based on their changes in electrical resistance rather than changes in their optical properties. Considered a 'dark horse' for some time, in 2006 Samsung announced the availability of a 512 Mbit part, considerably higher capacity than either MRAM or FeRAM. The areal density of these parts appears to be even higher than modern flash devices, the lower overall storage being due to the lack of multi-bit encoding. This announcement was followed by one from Intel and STMicroelectronics, who demonstrated their own PRAM devices at the 2006 Intel Developer Forum in October.
Millipede memory[edit]
Perhaps one of the more innovative solutions is millipede memory, developed by IBM. Millipede is in essence a punched card rendered using nanotechnology in order to dramatically increase areal density. Although it was planned to introduce Millipede as early as 2003, unexpected problems in development delayed this until 2005, by which point it was no longer competitive with flash. In theory the technology offers storage densities on the order of 1 Tbit/in² (10 Tbit/cm²), greater than even the best hard drive technologies currently in use (perpendicular recording offers 636 Gbit/in² (4.1 Tbit/cm²) as of Dec. 2011[8]), but future heat-assisted magnetic recording and patterned media together could support densities of 10 Tbit/in²[9] (almost 100 Tbit/cm²). However, slow read and write times for memories this large seem to limit this technology to hard drive replacements as opposed to high-speed RAM-like uses, although to a very large degree the same is true of flash as well.
FeFET memory[edit]
An alternative application of (hafnium oxide based) ferroelectrics is Fe FET based memory, which utilises a ferroelectric between the gate and device of a field-effect transistor. Such devices are claimed to have the advantage that the utilise the same technology as HKMG (high-L metal gate) based lithography, and scale to the same size as a conventional FET at a given process node. As of 2017 32Mbit devices have been demonstrated at 22 nm.
Others[edit]
A number of more esoteric devices have been proposed, including Nano-RAM based on carbon nanotube technology, but these are currently far from commercialization. The advantages that nanostructures such as quantum dots, carbon nanotubes and nanowires offer over their silicon-based predecessors include their tiny size, speed and their density. Several concepts of molecular-scale memory devices have been developed recently. Research has also been done in designing racetrack memory, also called domain wall memory.[10] Also seeing renewed interest is silicon-oxide-nitride-oxide-silicon (SONOS) memory.
See also[edit]
References[edit]
- ^'A Survey Of Architectural Approaches for Managing Embedded DRAM and Non-volatile On-chip Caches', Mittal et al., IEEE TPDS, 2014.
- ^[1]
- ^X4C105 NOVRAM Features and Applications, Intersil Application Note
- ^'F-RAM Memory Technology - Pioneered by Ramtron'. Ramtron.com. Retrieved 2012-06-08.
- ^[2]Archived June 10, 2009, at the Wayback Machine
- ^The Emergence of Practical MRAM 'Archived copy'(PDF). Archived from the original(PDF) on 2011-04-27. Retrieved 2009-07-20.CS1 maint: Archived copy as title (link)
- ^'venture capital, semiconductors, aerospace, manufacturing, computers, foundries, electronics, engineering, technology, business, financial, software, hardware, consumer, communication, wireless, mobile, design, IC, - Latest news for EEs and technical management'. Eetimes.com. Retrieved 2012-06-08.
- ^Hartin, Erin (2011-08-03). 'Hitachi GST Ships One Terabyte Per Platter Hard Drives'. Hitachi Global Storage Technologies. Archived from the original on 2011-10-26. Retrieved 2011-12-17.
- ^Johnston, Casey (2011-05-07). 'New hard drive write method packs in one terabit per inch'. Ars Technica. Retrieved 2011-12-17.
- ^Mittal, Sparsh. 'A Survey of Techniques for Architecting Processor Components Using Domain-Wall Memory'. ACM Journal on Emerging Technologies in Computing Systems. 13 (2): 1–25. doi:10.1145/2994550.
External links[edit]
- Supporting filesystems in persistent memory, LWN.net, September 2, 2014, by Jonathan Corbet
After flashing ROMs or installing updates, it is possible that the phone will get an invalid IMEI or unknown baseband. Invalid IMEI would mean no mobile network connections.
This tutorial will help you restore / fix lost / missing IMEI and Serial Numbers for MT6582, MT6572, MT6592, MT6589, MT6595
One method of restoring/repairing an invalid IMEI or unknown baseband is outlined in this tutorial. If this method does not work, you may try using MTK Droid Tools to manually enter IMEI numbers.
If these methods fail, check to see if you have a valid Serial Number.
1. From your phone keypad, type in *#66#.
2. Tap on SN. If it shows a blank space, that means you would first have to restore your Serial Number before you can work on fixing the IMEI.
NOTE: This method assumes your Serial Number is also invalid or null. However, if you have a valid Serial Number and only need to restore IMEI, you can still use this guide. Just choose method B below and do the IMEI Download option.
Requirements:
- PC
- MTK Phone and Data Cable
- NVRAM Database file for current ROM [Few NVRAM Database BPLGU files]
- Baseband configuration (.ini) file from manufacturer OR Serial Number and IMEI Numbers shown on the sticker on your phone’s battery tray
Connect to Maui META
1. Extract and install Maui META Software. Do not launch the program yet.
2. Switch your phone on and connect it to your PC. Install MediaTek VCOM Drivers.
3. Disconnect your phone and turn it off.
4. Keeping Device Manager open and visible in the background, locate MauiMETA Program and Run as Administrator.
5. Click on Options in the menu bar, and select “Connect Smart phone into META mode”
6. Click on Reconnect. Maui META will now ask you to “Please connect cable to target and then power on”.
7. Connect your phone to the PC, but DO NOT turn it on. Maui META will trigger the power up sequence. You should hear about 2 connect-disconnect sequence sounds from your PC.
a. During the first connection to Maui META, your phone will boot partially while CDC VCOM Drivers are installed automatically. Wait for it to finish.
b. After successful installation, you should see “Gadget CDC VCOM Driver (COMxx)” in Device Manager.
c. Even if the installation was successful, Maui META may still be unable to connect to your phone. If this is the case, close Maui META and disconnect your phone. Shut your phone off manually.
d. Run Maui META as administrator again and repeat step 5 to 7 and proceed to step 8.
8. Check if the connection was successful.
It is successful if you see the following:
- Your phone will appear in Device Manager as a Gadget CDC VCOM Driver (COMxx)
- Maui META indicates “Connected with Target” and shows your RF chip versions
- Your phone shows a static boot logo
If the connection was successful, proceed to step 9. However, f your phone shows as a MediaTek Preloader in Device Manager, or if your phone starts charging via USB, follow the steps below.
a. Go to Device Manager, highlight your phone in the list and right-click on it. Choose to update drivers manually, then point to this folder: (D:…MTK_USB_ADB_UltimateAll MTK USB Driver 2014 Properties)
b. Disconnect your phone, and repeat steps 5 to 8.
c. If you are continuously returning to these sub-steps, try using a different USB port.
(note: If your phone is not showing in Device Manager at all, uninstall drivers. Download USBdeview software, Run as Administrator, then uninstall your phone’s Device IDs. Restart at step 2.)
9. Once your phone boots into META mode, a Get Version pop up window will appear. Ignore and close this window.
Restoring Values
From here, there are two possible methods to go through. If the Update Parameter does not work (i.e. no successful flash message), do method B.
A. Update Parameter
A.1. In the main Maui META window, click on the drop down menu and select Update Parameter.
A.2. At the bottom of the pop up window, tick Barcode.
A.3. Click on “Change NVRAM Database” and select the NVRAM Database file that is suitable for your current ROM. Click Open.
A.4. Click on “Load from File” and select the .ini file that is compatible with your phone.
A.5. Click on Download to Flash and wait for this message: “Download Barcode Settings to flash successfully”.
B. Barcode Download + IMEI Download
B.1. Barcode Download
B.1.1. In the main Maui META window, click on the drop down menu and select Barcode Download.
B.1.2. Click on “Change NVRAM Database” and select the NVRAM Database file that is suitable for your current ROM. Click Open.
B.1.3. Type in the Serial Number you obtained from the back of the phone.
(If you are restoring a backup, click on “Load from File” and select the appropriate .ini file.)
B.1.4. Click on “Download to Flash”. Check the bottom of the window to see if the flash was successful.
B.1.5. Close the Barcode Download window.
B.2 IMEI Download
B.2.1. In the main Maui META window, click on the drop down menu and select IMEI Download.
B.2.2 Click on “Change NVRAM Database” and select the NVRAM Database file that is compatible with your current ROM version. Click Open.
B.2.3. In the SIM1 tab, type in the IMEI for SIM1. (Note: the last number of the IMEI goes into the checksum box.)
B.2.4. Click on SIM2 tab, and enter the IMEI for SIM2.
(If you are restoring a backup, select “Load From File” and select the appropriate .ini file. You only need to load this once for both IMEI numbers.)
B.2.5. Click on “Download to Flash”. Check the bottom of the window to see if the flash was successful.
Nvram Chip
Exiting META Mode
1. Close all pop-up windows.
2. Click on Disconnect, you should see a message saying “Please Standby”
3. Wait for Gadget CDC VCOM Driver to disappear from Device Manager List.
4. Wait for your phone to shutdown and enter charging mode.
5. Close Maui META and disconnect your phone.
You may now reboot your phone and check via *#66# and *#06# if you now have a valid Serial Number and IMEI Numbers.